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test early test often
M4 is excited to announce the availability of high-power transient thermal characterization and active power cycling testing services for power diode, MOSFET, and IGBT products. A non-destructive assessment is performed while the device remains mounted, powered, and cooled in the same way it would be in end-use applications. This provides package-level, layer-by-layer thermal transient characterization and defect identification of semiconductor devices in the form of a structure function. If power dissipation and thermal performance of your high-wattage semiconductor product is of critical concern, then structure function data can provide actionable design and process insights in a matter of hours.
Lack of resources, expertise or time?
We can help.
Early in the product development process you can explore different design options, materials, and approaches. The cost of changes are low and the opportunities to innovate are high. Now is your chance to create game changing ideas or brilliant solutions. Whether in conceptual design phase or PDR, we have software and services that can make it easier. Don’t wait. Contact us.