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M4 is excited to announce the availability of high-power transient thermal characterization and active power cycling testing services for power diode, MOSFET, and IGBT products. A non-destructive assessment is performed while the device remains mounted, powered, and cooled in the same way it would be in end-use applications. This provides package-level, layer-by-layer thermal transient characterization and defect identification of semiconductor devices in the form of a structure function. If power dissipation and thermal performance of your high-wattage semiconductor product is of critical concern, then structure function data can provide actionable design and process insights in a matter of hours.
M4 can perform a non-destructive assessment while the device remains mounted, powered, and cooled in the same way it would used. This provides package-level, layer-by-layer thermal transient characterization and defect identification of semiconductor devices in the form of a structure function which can provide actionable design and process insights in a matter of hours
Simcenter POWERTESTER active power cycling hardware provides an industry-unique capability of combining active power cycling with transient thermal characterization and thermal structure investigation. The unique, non-destructive structure-function assessment is performed while the device remains mounted, providing a full electrical and structural assessment of the device throughout the testing program in a fully automated way.
We can help install a POWERTESTER system, train and support your team so they develop the right level of knowledge and competence to perform in house POWER testing
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Early in the product development process you can explore different design options, materials, and approaches. The cost of changes are low and the opportunities to innovate are high. Now is your chance to create game changing ideas or brilliant solutions. Whether in conceptual design phase or PDR, we have software and services that can make it easier. Don’t wait. Contact us.
Exploring combined automated power cycling with real time failure-in-progress diagnosis for high power semiconductor components using an industrial thermal characterization test solution.
Topics include assessing stack material structure degradation or failures by analysis of the heat conduction path, lifetime prediction (>10K cycles into potentially millions) and verifying thermal properties.
An approach to power electronics suitable for IGBTs, MOSFETs and other power semiconductors applications.thermal reliability studies combining use of thermal CFD simulation, thermal transient measurement for package level model calibration to assist in defining testing studies then implemented with scalable automated power cycling & real-time failure diagnosis.
Thermal transient measurement techniques combined with power cycling for the evaluation of degradation in die attach material in power semiconductors, specifically IGBTs. Results and analysis are presented to identify degradation development before actual failure to determine useful life of devices and support
die attach material selection.